Semiconductor device and metod for forming the same

ABSTRACT

A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a first junction region formed at the bottom of a vertical pillar, a bit line formed below the first junction region, and an insulation film formed below the bit line. As a result, the 4F2-sized semiconductor device is provided and the bit line is configured in the form of a laminated structure of a conductive layer and a polysilicon layer, so that bit line resistance is reduced. In addition, the semiconductor device reduces ohmic contact resistance by forming silicide between the conductive layer and the polysilicon layer, and includes an insulation film at a position between the semiconductor substrate and the bit line, resulting in reduction of bit line capacitance. Therefore, the sensing margin of the semiconductor device is increased and the data retention time is also increased.

CROSS-REFERENCE TO RELATED APPLICATION

The priority of Korean patent application No. 10-2011-0000219 filed on 3Jan. 2011, the disclosure of which is hereby incorporated in itsentirety by reference, is claimed.

BACKGROUND OF THE INVENTION

Embodiments of the present invention relate to a semiconductor device,and more particularly to a semiconductor device and a method for formingthe same.

With the increasing degree of integration of semiconductor devices, thedesign rule is being gradually reduced. As the design rule is reduced,the development of highly-integrated semiconductor memory devices (forexample, a Dynamic Random Access Memory (DRAM)) is reaching its physicallimits. Therefore, research for reducing a unit area of a cell storingone bit (1 bit) of data is being conducted. Recently, the unit celldesign implementation has transitioned from a 8F2-sized unit cell forstoring one bit to a 6F2-sized or 4F2-sized unit cell, so that ahigh-density cell structure can be configured.

In order to construct a transistor having the 4F2-sized unit cell, it isnecessary for a junction part corresponding to the source and drain partto be in the 1F2-sized format. To accomplish this, many developers andcompanies are conducting intensive research into a cell transistorincluding a vertical channel in which the source and the drain can beformed within the 1F2-sized format. For a cell transistor including avertical channel, the source region and the drain region of thetransistor capable of operating the cell are formed at lower and upperparts, respectively, and the transistor is operated through avertical-shaped channel. In a device with these features, the source anddrain regions that run horizontally within the 8F2-sized unit cell arelocated at upper and lower parts in such a manner that the source anddrain regions are configured in the form of a vertical structure, sothat the cell transistor can be operated within the 4F2-sized unit cell.However, a cell transistor structure having such a vertical channel isdifficult to fabricate, and it is very difficult to form the celltransistor structure due to structural complexity.

BRIEF SUMMARY OF THE INVENTION

Various embodiments of the present invention are directed to providing asemiconductor device and a method for forming the same thatsubstantially obviate one or more problems due to limitations anddisadvantages of the related art.

An embodiment of the present invention relates to a semiconductor deviceand a method for forming the same, which solves some of the problemsassociated with highly integrated vertical cell transistors.

In accordance with an aspect of the present invention, a semiconductordevice includes a first junction region formed at the bottom of avertical pillar; a bit line formed below the first junction region; andan insulation film formed below the bit line.

The semiconductor device may further include a polysilicon layer formedbetween the pillar and the bit line.

The semiconductor device may further include a barrier conductive layerformed between the polysilicon layer and the bit line.

The barrier conductive layer may include either a laminated structure oftitanium (Ti) and titanium nitride (TiN) films or cobalt (Co).

The semiconductor device may further include an amorphous silicon layerformed between the pillar and the bit line.

The bit line may include a metal-based material.

The semiconductor device may further include a gate oxide film formed ata lateral surface of the pillar; and a gate formed over the gate oxidefilm.

The semiconductor device may further include a second junction regionformed over the pillar.

The semiconductor device may further include a barrier conductive layerand a conductive layer that are formed over the second junction region;and a storage node formed over the conductive layer.

In accordance with another aspect of the present invention, a method forforming a semiconductor device includes forming a recess by etching asemiconductor substrate; forming an insulation film at the bottom andsidewall of the recess; forming a bit line over the insulation film;forming a silicon layer over the semiconductor substrate in such amanner that the recess is buried; forming a first junction region at thebottom of the silicon layer by implanting ions in the silicon layer; andforming a pillar by etching the silicon layer, the first junction regionand the semiconductor substrate.

The forming of the recess may include forming an oxide film and a hardmask pattern over the semiconductor substrate; and etching the oxidefilm and the semiconductor substrate using the hard mask pattern as anetch mask.

The recess may have a depth of 50 nm to 300 nm.

The method may further include, after forming the recess, performing anannealing process including H₂.

The forming of the insulation film at the bottom and sidewall of therecess may include forming an insulation material over the semiconductorsubstrate in such a manner that the recess is buried; and performing anetchback process on the insulation material.

The method may further include, after forming the bit line, forming apolysilicon layer over the bit line.

The method may further include forming a barrier conductive layerbetween the bit line and the polysilicon layer.

The method may further include, after forming the bit line, forming anamorphous silicon layer over the bit line.

The method may further include, after forming the bit line, exposing asurface of the semiconductor substrate and an upper part of the recesssidewall.

The exposing of the semiconductor substrate surface and the upper partof the recess sidewall may include performing ion implantation on anoxide film and the insulation film; and removing the ion-implanted oxidefilm and the ion-implanted insulation film by performing a cleaningprocess.

The method may further include, after exposing the surface of thesemiconductor substrate and the upper part of the recess sidewall,forming an undoped amorphous silicon layer over the polysilicon layer,the recess sidewall, and the semiconductor substrate; forming acrystalline silicon layer by performing solid phase epitaxy on theundoped amorphous silicon layer; and forming the silicon layer byperforming a selective epitaxial growth method using the crystallinesilicon layer as a seed.

The method may further include, after exposing the surface of thesemiconductor substrate and the upper part of the recess sidewall,performing heat treatment at a temperature of 200° C. to 1000° C. and H₂atmosphere for 10 to 120 minutes.

The method may further include, after forming the silicon layer,performing a heat treatment process at a position between the bit lineand the polysilicon layer, thereby forming silicide.

The heat treatment process may be performed at a temperature of 300° C.to 800° C. and N₂ atmosphere for 1 to 60 minutes.

The method may further include, after forming the silicon layer,performing a planarization etching process on the silicon layer.

The forming of the first junction region may include implanting N-typeion or P-type ion, wherein the N-type ion includes phosphorus (Ph) orarsenic (As) and the P-type ion includes boron (B).

The forming of the first junction region is performed under a processcondition of a dose of 1E10/cm² to 1E18/cm² and energy of 1 KeV to 200KeV.

The forming of the pillar by etching the silicon layer, the firstjunction region and the semiconductor substrate may include performingthe etching to a predetermined depth corresponding to a height of anupper end of the bit line in a direction perpendicular to the bit line.

The method may further include, after forming the pillar, forming a gateoxide film at a sidewall of the pillar; forming a gate over the gateoxide film; and forming a second junction region over the pillar.

The method may further include, after forming the second junctionregion, forming a barrier conductive layer and a conductive layer overthe second junction region; and forming a storage node over theconductive layer.

In accordance with still another aspect of the present invention, amethod for forming a semiconductor device includes forming an insulationfilm pattern and a bit line over a semiconductor substrate; forming asilicon layer over the semiconductor substrate using the semiconductorsubstrate exposed by the bit line and the insulation film pattern as aseed; forming a first junction region at the bottom of the silicon layerby implanting ions into the silicon layer; and forming a pillar byetching the silicon layer and the first junction region.

The method may further include, after forming the bit line, forming apolysilicon pattern over the bit line.

The method may further include, after forming the insulation filmpattern and the bit line over the semiconductor substrate, performing aheat treatment process on the semiconductor substrate.

The heat treatment process may be performed at a temperature of 400° C.to 1000° C. and atmosphere of H₂, Ar or N₂ for 10 to 3600 seconds.

The method may further include, after forming the insulation filmpattern and the bit line, forming a spacer at sidewalls of theinsulation film pattern, the bit line, and the polysilicon pattern.

The method may further include, after forming the spacer, forming anundoped amorphous silicon layer over the semiconductor substrate and thepolysilicon pattern; forming a crystalline silicon layer by performingsolid phase epitaxy on the undoped amorphous silicon layer; and formingthe silicon layer by performing a selective epitaxial growth methodusing the crystalline silicon layer as a seed.

The forming of the silicon layer may include performing heat treatmentat a temperature of 200° C. to 1000° C. and H₂ atmosphere for 10 to 120minutes.

The method may further include, after forming the silicon layer,performing a heat treatment process at a position between the bit lineand the polysilicon layer, thereby forming silicide.

The forming of the pillar by etching the silicon layer and the firstjunction region may include performing the etching to a predetermineddepth corresponding to a height of an upper end of the bit line in adirection perpendicular to the bit line.

The method may further include, after forming the pillar, forming a gateoxide film at a sidewall of the pillar; forming a gate over the gateoxide film; and forming a second junction region over the pillar.

The method may further include, after forming the second junctionregion, forming a barrier conductive layer and a conductive layer overthe second junction region; and forming a storage node over theconductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a semiconductor deviceaccording to one embodiment of the present invention.

FIGS. 2A to 2I are cross-sectional views illustrating a method forforming a semiconductor device according to one embodiment of thepresent invention.

FIG. 3 is a cross-sectional view illustrating a semiconductor deviceaccording to a second embodiment of the present invention.

FIGS. 4A to 4G are cross-sectional views illustrating a method forforming a semiconductor device according to a second embodiment of thepresent invention.

DESCRIPTION OF EMBODIMENTS

Reference will now be made in detail to embodiments of the presentinvention, examples of which are illustrated in the accompanyingfigures. Wherever possible, the same reference numbers will be usedthroughout the figures to refer to the same or similar elements.

FIG. 1 is a cross-sectional view illustrating a semiconductor deviceaccording to one embodiment of the present invention. Referring to FIG.1, the semiconductor device according to this embodiment includes afirst junction region 118 b formed below a silicon layer 116 b, a bitline 108 formed below the first junction region 118 b, and an insulationfilm 106 formed below the bit line 108. Preferably, the bottom of theinsulation film 106 is disposed below the upper surface of semiconductorsubstrate 100.

In addition, an embodiment may further include a barrier conductivelayer 110 formed between a polysilicon layer 112 and a bit line 108; agate oxide film 124 formed around a pillar 128; an interlayer insulationfilm 122 interposed between neighboring pillars; a gate 126 formed overlateral surfaces of the interlayer insulation film 122 and the pillar128; and a second junction region 130 formed in the upper part of thepillar 128.

Preferably, the bit line 108 may include tungsten (W), and the barrierconductive layer 110 may include either a laminated structure oftitanium (Ti) and titanium nitride (TiN) films or cobalt (Co). Inaddition, the polysilicon layer 112 may be replaced with an amorphoussilicon layer.

In accordance with the present invention, the bit line is located at alower extended line of the pillar, so that it can more easily providethe 4F2-sized structure. In an embodiment, the bit line includes a metalmaterial to reduce resistance of the bit line and the bit linecapacitance in order to improve the sensing margin and data retentioncharacteristics.

A method for forming the above-mentioned semiconductor device accordingto one embodiment of the present invention will hereinafter be describedwith reference to the figures. FIGS. 2A to 2I are cross-sectional viewsillustrating a method for forming a semiconductor device according toone embodiment of the present invention.

Referring to FIG. 2A, an oxide film 102 is formed over the semiconductorsubstrate 100, and a hard mask pattern 104 is formed over the oxide film102. Subsequently, the oxide film 102 and the semiconductor substrate100 are etched using the hard mask pattern 104 as an etch mask, so thatthe recess R is formed. Preferably, the recess R has a depth of 50 nm to300 nm. After forming the recess R, a treatment may be performed totreat the surface damage of the recess (R). Preferably, the treatmentprocess is an annealing process including H₂.

Referring to FIG. 2B, an insulation material is formed over thesemiconductor substrate 100 including the recess (R), and is then etchedback, leaving portions over surfaces of the recess (R). The remainingportions of the insulation film are insulation film 106. Preferably, theinsulation film 106 may include a Spin On Dielectric (SOD), a HighDensity Plasma (HDP), a Tetra Ethyl Oxide Silicate (TEOS) or a borophosousphorous glass (BPSG). It is preferable that the height of theinsulation film 106 at the bottom of the recess R is from 10 nm to 100nm.

Subsequently, a bit line metal material is formed over the insulationfilm 106, and is then etched back to form the bit line 108. The barriermetal material is formed over the bit line 108, and is then etched backto form the barrier conductive layer 110. Polysilicon is formed over thebarrier conductive layer 110 and is then etched back, so that thepolysilicon layer 112 is formed. The bit line 108 may include ametal-based material, and the barrier conductive layer 110 may includeeither a laminated structure of titanium (Ti) and titanium nitride (TiN)films or cobalt (Co). Preferably, the metal-based material includestungsten (W), copper (Cu) or aluminum (Al). In this case, thepolysilicon layer 112 may be changed to the amorphous silicon layer asnecessary. In some embodiments, it is preferable that a laminatedstructure of the bit line 108, the barrier conductive layer 110, and thepolysilicon layer 112 have a thickness of 10 nm to 100 nm.

Formation of the barrier conductive layer 110 may be used to increaseadhesion between bit line 108 and polysilicon layer 112. Formation ofthe polysilicon layer 112 enables the junction region 118 (See ‘118’ ofFIG. 2G) formed in a subsequent process to ohmically contact the bitline 108 in order to prevent the occurrence of a junction leakagecurrent.

Referring to FIG. 2C, after removing the hard mask pattern 104, tilt ionimplantation is performed not only on the oxide film 102 formed over thesemiconductor substrate 100, but also on portions of the insulation film106 formed over an upper sidewall of the recess (R). The resultant oxidefilm 102 and portions of insulation film 106 that were affected by thetilt ion implantation are easily removed by a cleaning process becausethe etch selection ratio of the implanted portions of the films ishigher than that of the substrate 100, non-ionized portions ofinsulation film 106, and polysilicon layer 112.

Referring to FIG. 2D, the oxide film 102 formed over the ion-implantedsemiconductor substrate 100 and the insulation film 106 formed over theupper sidewall of the recess R are removed by a cleaning process. As aresult, the upper surface of the semiconductor substrate 100 andportions of substrate 102 forming an upper sidewall of the recess R areexposed.

Referring to FIG. 2E, undoped amorphous silicon 113 is formed not onlyover the exposed semiconductor substrate 100, but also over the uppersidewall of the recess R.

Referring to FIG. 2F, the undoped amorphous silicon 113 is heat-treatedusing solid phase epitaxy so that crystalline silicon 114 is formed.Thereafter, silicon layer 116 is formed using a selective epitaxialgrowth method in which the crystalline silicon 114 is used as a seed. Inthis embodiment, silicon layer 116 is used to bury the upper part ofrecess R, and is grown from the surface of the underlying structure sothat the resultant silicon layer 116 has a specific height. The siliconlayer 116 may be formed to have the height of 10 nm to 1000 nm from thesurface of the semiconductor substrate 100. In this case, the siliconlayer 116 may be grown not only through the selective epitaxial growthmethod, but also through a heat treatment that is conducted for 10 to120 minutes at a temperature of 200° C. to 1000° C. in an H₂environment.

After the silicon layer 116 is formed, heat treatment may be performedon the silicon layer 116, so that a silicide material (not shown) isformed between the barrier conductive layer 110 and the polysiliconlayer 112. Preferably, the heat treatment is performed at a temperatureof 300° C. to 800° C. and an N₂ environment for 1 to 60 minutes.

Referring to FIG. 2G, a planarization etching process is performed onthe silicon layer 116, and N-type ions or P-type ions are implanted sothat the first junction region 118 is formed. In this case, theplanarization etching process may be conducted in such a manner that thelaminated structure of portions of the first junction region 118 andsilicon layer 116 formed over the polysilicon layer 112 have a thicknessof 10 nm to 200 nm. If the above-mentioned laminated structure has athickness of 10 nm or less, it is impossible for the laminated structureto be used as a transistor. If the above-mentioned laminated structurehas a thickness of 200 nm or higher, resistance is increased so that itis also impossible for the laminated structure to be used as atransistor. Preferably, N-type ions include phosphorus (Ph) or arsenic(As), and P-type ions include boron (B) or BF₂. In addition, the ionimplantation process may be performed under the process condition of adose of 1E10/cm² to 1E18/cm² and energy of 1 KeV to 200 KeV.

Referring to FIG. 2H, after a mask pattern 120 is formed over thesilicon layer 116, the silicon layer 116, the first junction region 118,and the semiconductor substrate 100 are etched using mask pattern 120 asan etch mask so that an upper sidewall of the insulation film 106 isexposed, and a line-type laminated structure, including the line-typesilicon layer 116 a and the first line-type junction region 118 a,extended in a first direction, is formed. In an embodiment, the maskpattern 120 may be a line-and-space type having a long axis in the firstdirection.

Referring to FIG. 2I, an interlayer insulation film 122 is formedbetween line-type laminated structures. Preferably, the interlayerinsulation film 122 may include high density plasma (HDP) or spin ondielectric (SOD). Thereafter, the line-type laminated structure and theinterlayer insulation film 122 are etched in a second direction (theleft-to-right horizontal direction of FIG. 2H) perpendicular to thefirst direction, so that the pillar 128 is formed. In this embodiment,the first direction is parallel to the long-axis direction of the bitline 108. Therefore, in the case of the pillar 128, when the line-typelaminated structure is etched in the second direction, the line-typesilicon layer 116 a extended in the first direction and the line-typefirst junction region 118 a extended in the first direction are etchedto a depth equal to or above an upper surface of bit line 108, so thatpillar 128 may be formed. The pillar 128 may have a square or tetragontype as shown in ‘B,’ which shows a plan view of portion ‘A’ of FIG. 2I.

Thereafter, the gate oxide film 124 is formed over a lateral surface ofpillar 128, and the gate 126 is formed over the gate oxide film 124 witha long axis extending in a second direction. Preferably, the gate oxidefilm 124 is formed by oxidization of the surface of the pillar 128.

Thereafter, an insulation film 122 is formed between gates 126, and maskpattern 120 is removed. As a result, the pillar 128 is exposed, and ionimplantation is performed on the exposed portion of silicon layer 116 b,so that the second junction region 130 is formed. In this embodiment,the first junction region 118 b and the second junction region 130 areused as a source or drain, so that a vertical channel is formed in thepillar 128. Although not shown in the drawings, it is preferable that abarrier conductive layer and a conductive layer are formed over thesecond junction region 130, and the storage electrode is then formed.

In accordance with a method for forming the semiconductor deviceaccording to one embodiment of the present invention, a recess is formedin the semiconductor substrate and a bit line is formed at a lowerportion of the pillar, so that a 4F2-sized semiconductor device isformed. After an insulation film is formed, the bit line is formed overthe insulation, so that parasitic capacitance of the bit line isreduced, and at the same time the data sensing margin and the dataretention time can be increased. In addition, the bit line is formed ofmetal so that bit line resistance is reduced. Silicide is formed betweenthe barrier conductive layer and the polysilicon layer to reduce contactresistance, so that the possibility of generating defects at aninterface between bit lines may be reduced.

The scope of the present invention is not limited to the above-describedmethod and structure. Another embodiment of the invention includesforming a pillar over a substrate without forming a recess in thesubstrate. A detailed description thereof will hereinafter be describedwith reference to FIGS. 3 and 4A to 4F.

FIG. 3 is a cross-sectional view illustrating a semiconductor deviceaccording to a second embodiment of the present invention. FIGS. 4A to4G are cross-sectional views illustrating a method for forming asemiconductor device according to a second embodiment of the presentinvention.

Referring to FIG. 3, a semiconductor device according to a secondembodiment of the present invention includes a pillar 224, a firstjunction region 214 b formed below the silicon layer 213 b, a bit line204 a formed below the first junction region 214 b, and an insulationfilm pattern 202 a formed below the bit line 204 a.

In addition, the semiconductor device according to a second embodimentof the present invention may further include a barrier metal pattern 206a formed between the bit line 204 a and a polysilicon pattern 208 a, agate oxide film 220 formed around a pillar 224, an interlayer insulationfilm 218 formed between neighboring pillars 224, a gate 222 formed overthe interlayer insulation film 218 and the pillar 224, and a secondjunction region 226 formed in the upper part of the pillar 224.

In this embodiment, the bit line 204 a may include tungsten (W), andbarrier metal pattern 206 a may include either a laminated structure ofTi and TiN films or cobalt (Co). In some embodiments, polysiliconpattern 208 a may be an amorphous silicon layer.

A method for forming a semiconductor device according to a secondembodiment of the present invention will hereinafter be described withreference to FIGS. 4A to 4F.

Referring to FIG. 4A, an oxide film 202, a bit line conductive film 204,a barrier conductive film 206 and a polysilicon layer 208 are formedover the semiconductor substrate 200. The oxide film 202 may be formedor grown to have a thickness of 10 nm to 500 nm by a chemical vapordeposition (CVD) or heat oxidation process. The bit line conductivelayer 204 may include tungsten (W), and the barrier conductive layer 206may include either a laminated structure of Ti and TiN films or cobalt(Co). In addition, the polysilicon layer 208 may be replaced with anamorphous silicon layer as necessary.

Referring to FIG. 4B, a mask pattern (not shown) is formed over thepolysilicon layer 208, and polysilicon layer 208 is etched using themask pattern (not shown) as an etch mask, so that the polysiliconpattern 208 a, the barrier metal pattern 206 a, the bit line 204 a, andthe oxide film pattern 202 a are formed. In addition, the processexposes a surface of the semiconductor substrate 200. In order toprevent the surface of the exposed semiconductor substrate 200 frombeing damaged, it is preferable that a treatment process is performed.Specifically, heat treatment may be performed in an atmosphere of H₂, Aror N₂. Preferably, the heat treatment is performed at a temperature of400° C. to 1000° C. for 10 to 3600 seconds.

Subsequently, a spacer 210 is formed over sidewalls of the polysiliconpattern 208 a, the barrier metal pattern 206 a, the bit line 204 a, andthe oxide film pattern 202 a. Preferably, after forming an insulationfilm, the spacer 210 may be formed by an etchback process.

Referring to FIG. 4C, undoped amorphous silicon 211 is formed over thesemiconductor substrate 200 and the polysilicon pattern 208 a.

Referring to FIG. 4D, the undoped amorphous silicon layer 211 isheat-treated using solid phase epitaxy so that crystalline silicon 212is formed. Thereafter, silicon layer 213 is formed using a selectiveepitaxial growth method in which the crystalline silicon 212 is used asa seed.

The silicon layer 213 may be formed to have a height of 10 nm to 1000 nmon the basis of the height of the barrier metal pattern 206 a. Thesilicon layer 213 may be grown through a selective epitaxial growthmethod, and it may be heat treated in a process that is conducted at atemperature of 200° C. to 1000° C. and an H₂ atmosphere.

After the silicon layer 213 is formed, heat treatment is performed onthe silicon layer 213, so that a silicide material (not shown) is formedbetween the barrier metal pattern 206 a and the polysilicon pattern 208a. Preferably, heat treatment is performed at a temperature of 300° C.to 800° C. and an N₂ atmosphere for 1 to 60 minutes. If the polysiliconpattern 208 a is formed of amorphous silicon, it is preferable that theamorphous silicon is changed to crystalline polysilicon while heattreatment is conducted by solid phase epitaxy.

Referring to FIG. 4E, a planarization etching process is performed onsilicon layer 213, and N-type ions or P-type ions are implanted so thatthe first junction region 214 is formed. Preferably, N-type ions includephosphorus (Ph) or arsenic (As), and P-type ions include boron (B) orBF₂. The ion implantation process may be performed with a dose of1E10/cm² to 1E18/cm² and energy of 1 KeV to 200 KeV.

Referring to FIG. 4F, after a mask pattern 216 is formed over siliconlayer 213, silicon layer 213 and the first junction region 214 areetched using the mask pattern 216 as an etch mask so that an uppersidewall of the oxide film pattern 202 a is exposed, and the line-typelaminated structure, including the first line-type silicon layer 213 aand the first line-type junction region 214 a, is formed extending in afirst direction parallel to the long axis of bit line 204 a. In thisembodiment, silicon layer 213 is etched to a point below the uppersurface of oxide film pattern 202 a, so that the semiconductor substrateremains covered by portions of crystalline silicon 212. The mask pattern216 may be a line-and-space type having a long axis in the firstdirection.

Referring to FIG. 4G, an interlayer insulation film 218 is formedbetween the line-type laminated structures. The interlayer insulationfilm 218 may be formed by a high density plasma (HDP) or Spin ondielectric (SOD) process. Thereafter, the line-type laminated structureis etched in a second direction perpendicular to the first direction, sothat the pillar 224 is formed. In more detail, before etching, siliconlayer 213 a and first junction region 214 a extend in a first direction.An etching process is performed in a second direction perpendicular tothe first direction up to a depth of the upper edge of bit line 208,thereby forming pillar 224. In some embodiments, the depth can be abovethe upper edge of bit line 208. The pillar 224 may be a square ortetragon type as shown in ‘D,’ which shows a plan view of the ‘C’ partof FIG. 4G.

Thereafter, a gate oxide film 220 is formed around the pillar 224, and agate 222 having a long axis extended in the second direction is formedover the gate oxide film 220. Preferably, the gate oxide film 220 isformed by oxidization of the surface of the pillar 224.

Thereafter, an insulation film (not shown) is buried between the gates222, and mask pattern 216 is removed. Then, ion implantation isperformed on the exposed silicon layer 213 b, so that the secondjunction region 226 is formed. In this embodiment, the first junctionregion 214 b and the second junction region 226 are used as a source ordrain, so that a vertical channel is formed in the pillar 224.

Although not shown in the drawings, it is preferable that a barrierconductive layer and a conductive layer are formed over the secondjunction region 226, and a storage electrode is then formed over theconductive layer.

As is apparent from the above description, the above-described methodfor forming a semiconductor device according to a second embodiment ofthe present invention forms an insulation film over the semiconductorsubstrate, and forms a bit line over the insulation film to reducecapacitance of the bit line and at the same time increases the datasensing margin and the data retention time. In addition, the bit line isformed at a lower extended line of the pillar formed in a subsequentprocess so that the 4F2-sized structure can be completed. The bit lineis formed of metal so that bit line resistance is reduced. Silicide isformed between the barrier conductive layer and the polysilicon layer soas to reduce contact resistance, so that the possibility of generating adefect at an interface between bit lines may be reduced.

The above embodiment of the present invention is illustrative and notlimitative. Various alternatives and equivalents are possible. Theinvention is not limited by the embodiment described herein. Nor is theinvention limited to any specific type of semiconductor device. Otheradditions, subtractions, or modifications are obvious in view of thepresent disclosure and are intended to fall within the scope of theappended claims.

1. A semiconductor device comprising: a first junction region formed atthe base of a vertical pillar; a bit line formed below the firstjunction region; and an insulation film formed below the bit line. 2.The semiconductor device according to claim 1, further comprising: apolysilicon layer formed between the pillar and the bit line.
 3. Thesemiconductor device according to claim 2, further comprising: a barrierconductive layer formed between the polysilicon layer and the bit line.4. The semiconductor device according to claim 3, wherein the barrierconductive layer includes either a laminated structure of titanium (Ti)and titanium nitride (TiN) films or cobalt (Co).
 5. The semiconductordevice according to claim 1, further comprising: an amorphous siliconlayer formed between the pillar and the bit line.
 6. The semiconductordevice according to claim 1, wherein the bit line includes a metalmaterial.
 7. The semiconductor device according to claim 1, furthercomprising: a gate oxide film formed over a lateral surface of thepillar; and a gate formed over the gate oxide film.
 8. The semiconductordevice according to claim 1, further comprising: a second junctionregion formed in an upper portion of the pillar.
 9. The semiconductordevice according to claim 8, further comprising: a barrier conductivelayer and a conductive layer that are formed over the second junctionregion; and a storage node formed over the conductive layer.
 10. Amethod for forming a semiconductor device comprising: forming a recessby etching a semiconductor substrate; forming an insulation film over abottom and a sidewall of the recess; forming a bit line over theinsulation film; forming a silicon layer over the semiconductorsubstrate in such a manner that open portions of the recess are filled;forming a first junction region in a bottom portion of the silicon layerby implanting ions in the silicon layer; and forming a pillar by etchingthe silicon layer, the first junction region and an interlayerinsulation film.
 11. The method according to claim 10, wherein theforming the recess includes: forming an oxide film and a hard maskpattern over the semiconductor substrate; and etching the oxide film andthe semiconductor substrate using the hard mask pattern as an etch mask.12. The method according to claim 10, wherein the recess has a depth of50 nm to 300 nm.
 13. The method according to claim 10, furthercomprising: performing an annealing process including H₂.
 14. The methodaccording to claim 10, wherein the forming the insulation film over thebottom and sidewall of the recess includes: forming an insulationmaterial over the semiconductor substrate to cover exposed surfaces ofthe recess; and performing an etchback process on the insulationmaterial.
 15. The method according to claim 10, further comprising:forming a polysilicon layer over the bit line.
 16. The method accordingto claim 15, further comprising: forming a barrier conductive layerbetween the bit line and the polysilicon layer.
 17. The method accordingto claim 10, further comprising: forming an amorphous silicon layer overthe bit line.
 18. The method according to claim 10, further comprising:exposing a surface of the semiconductor substrate and an upper portionof the recess sidewall.
 19. The method according to claim 18, whereinthe exposing the surface of the semiconductor substrate and the upperportion of the recess sidewall includes: performing ion implantation onan oxide film and the insulation film; and removing the ion-implantedoxide film and the ion-implanted insulation film by performing acleaning process.
 20. The method according to claim 19, furthercomprising: forming an undoped amorphous silicon layer over thepolysilicon layer, the recess sidewall, and the semiconductor substrate;forming a crystalline silicon layer by performing solid phase epitaxy onthe undoped amorphous silicon layer; and forming the silicon layer byperforming a selective epitaxial growth method using the crystallinesilicon layer as a seed.
 21. The method according to claim 19, furthercomprising: after exposing the surface of the semiconductor substrateand the upper portion of the recess sidewall, performing heat treatmentat a temperature of 200° C. to 1000° C. in an H₂ atmosphere for 10 to120 minutes.
 22. The method according to claim 10, further comprising:performing a heat treatment process affecting a portion of thesemiconductor between the bit line and a polysilicon layer disposed overthe bit line, thereby forming silicide.
 23. The method according toclaim 22, wherein the heat treatment process is performed at atemperature of 300° C. to 800° C. in an N₂ atmosphere for 1 to 60minutes.
 24. The method according to claim 10, further comprising:performing a planarization etching process on the silicon layer.
 25. Themethod according to claim 10, wherein the forming the first junctionregion includes: implanting N-type ions or P-type ions, wherein theN-type ions include phosphorus (Ph) or arsenic (As) and the P-type ionsinclude boron (B).
 26. The method according to claim 10, wherein theforming the first junction region is performed under process conditionsincluding a dose of 1E10/cm² to 1E18/cm² and energy of 1 KeV to 200 KeV.27. The method according to claim 10, wherein the forming the pillar byetching the silicon layer, the first junction region and the interlayerinsulation film includes: performing the etching in a directionperpendicular to the major axis of the bit line to a predetermined depthcorresponding to a height of an upper end of the bit line.
 28. Themethod according to claim 10, further comprising: forming a gate oxidefilm over a sidewall of the pillar; forming a gate over the gate oxidefilm; and forming a second junction region in an upper portion of thepillar.
 29. The method according to claim 28, further comprising:forming a barrier conductive layer and a conductive layer over thesecond junction region; and forming a storage node over the conductivelayer.
 30. A method for forming a semiconductor device comprising:forming an insulation film pattern and a bit line over a semiconductorsubstrate; forming a silicon layer over the semiconductor substrate;forming a first junction region at the base of the silicon layer byimplanting ions into the silicon layer; and forming a pillar by etchingthe silicon layer and the first junction region.
 31. The methodaccording to claim 30, further comprising: forming a polysilicon patternover the bit line.
 32. The method according to claim 30, furthercomprising: performing a heat treatment process on the semiconductorsubstrate.
 33. The method according to claim 32, wherein the heattreatment process is performed at a temperature of 400° C. to 1000° C.and an atmosphere of H₂, Ar or N₂ for 10 to 3600 seconds.
 34. The methodaccording to claim 32, further comprising: forming a spacer at sidewallsof the insulation film pattern, the bit line, and the polysiliconpattern.
 35. The method according to claim 34, further comprising:forming an undoped amorphous silicon layer over the semiconductorsubstrate and a polysilicon pattern; forming a crystalline silicon layerby performing solid phase epitaxy on the undoped amorphous siliconlayer; and forming the silicon layer by performing a selective epitaxialgrowth method using the crystalline silicon layer as a seed.
 36. Themethod according to claim 30, wherein the forming the silicon layerincludes: performing heat treatment at a temperature of 200° C. to 1000°C. in an H₂ atmosphere for 10 to 120 minutes.
 37. The method accordingto claim 30, further comprising: performing a heat treatment processaffecting a portion of the semiconductor between the bit line and apolysilicon layer disposed over the bit line, thereby forming silicide.38. The method according to claim 30, wherein the forming the pillar byetching the silicon layer and the first junction region includes:performing the etching to a predetermined depth corresponding to aheight of an upper surface of the bit line in a direction perpendicularto the bit line.
 39. The method according to claim 30, furthercomprising: forming a gate oxide film over a sidewall of the pillar;forming a gate over the gate oxide film; and forming a second junctionregion in an upper portion of the pillar.
 40. The method according toclaim 39, further comprising: forming a barrier conductive layer and aconductive layer over the second junction region; and forming a storagenode over the conductive layer.